- Applications
- Ultra-High Vacuum for Nitride and Oxide Growth
Ultra-High Vacuum for Nitride and Oxide Growth
Growth of high quality Nitrides and Oxides for GaInNAs, GaN, ZnO, Ultrathin Al2O3, and high-k dielectric oxides is facilitated by a neutral beam with extremely high atomic flux and zero ion content.
The mini E-beam from Oxford Applied Research can be used with rod or crucibles to evaporate and deposit uniform thin layers on substrates under Ultra-High Vacuum conditions. A voltage range of 0-1000V, plus hardware flux control and shutters, the EG series are high quality E-beam evaporators. The EG series can be equipped with up to 4 pockets and the ability to co-evaporate 2 pockets at a time.
Customizable Aperture Plate for various end material applications
The Oxford Applied Research Aperture Plate can be easily customized for different hole patterns based on the end material application. It offers optional shutters for high control of the deposition and rate. Full automation is possible from 0.01 to 100sccm.
Zero Ion Content
For many applications the presence of even 0.01% ion content in the beam can change the properties of the material being grown, rendering it useless for its intended application. The Oxford Applied Research HD Series includes a number of unique design features that completely eliminate charged particles from the atom flux.
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Not sure if Ultra-High Vacuum will work for your application?
Our specialists are happy to help.
Not sure if Ultra-High Vacuum will work for your application?
Our specialists are happy to help.