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- RF Atom Sources
RF Atom Sources
With the extensive experience of Oxford Applied Research, these atom sources are employed in a wide variety of thin film processes, both in research and fully-automated production applications. The sources are ideal for of high quality nitrides and oxides, and substrate-cleaning using atomic hydrogen. The sources are used with great success in applications such as GaInNAs, GaN, ZnO, ultra-thin Al2O3 films and high-k dielectric oxides. They produce a neutral beam with an extremely high atomic flux and essentially zero ion content, and are designed to easily allow changes between different gases and flow regimes.
- High dissociation
- High quality films
- Uniform coverage
- Nitrides, Oxides, N-doping, Hydrogen atom cleaning
Features
Application areas
Utilized in a wide variety of thin film processes, both in research and fully-automated production applications.
Low energy process
The thermal characteristics of the reactive beam ensure rapid delivery of atomic species to the substrate without the detrimental consequences of high energy processes. This makes the sources ideal for the growth of high quality nitrides and oxides, and for low-damage cleaning using atomic hydrogen.
Zero ion content
The HD series includes a number of unique design features which completely eliminates charged particles from the atom flux.
Beam shaping
All our RF sources are now available with beam shaping of the atomic flux to permit high uniformity over a large area.
Highly efficient water cooling
This ensures minimal contamination during operation.
Specifications
Not sure if Ultra-High Vacuum will work for your application?
Our specialists are happy to help.
Not sure if Ultra-High Vacuum will work for your application?
Our specialists are happy to help.