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Home / Products / Graphene / TCVD-RF100CA – RF/MW Module

TCVD-RF100CA – RF/MW Module

Premium Custom Design Dual CVD System with a Glove Box 

A Chemical Vapor Deposition (CVD) system for the synthesis of 2D materials at scales from a chip to a wafer, including synthesis of graphene, h-BN, TMDC’s on various substrates by use of gas-phase or solid precursors and metal-organic (MO) sources.  The synthesized samples can be transferred to a glove box filled with inert gases for further processes without exposure to environmental effects.

For the development and research into future materials and graphene, h-BN, CNT, TMDC’s, the TCVD-DC100CA is the quality tool of choice that comes with a vast knowledge of know-how.

The TVCD-DC100CA Features

  • Automatic control system
  • Optimized for Graphene, CNT, h-BN and TMDC growth
  • Water cooling and turbo pump for synthesis and environmental stability
  • Process temperature: ~1,100 degree C
  • Uniformity of Film Thickness: + or – 3%
  • Movable furnace method is our unique knowhow for fast heating and fast cooling of the sample
  • Standard Safety box

The TCVD-100A Advantages

Quality, advanced equipment that is customizable to your research needs.

  • Furnaces – dual furnace with RF M/W Module
  • Chamber size – 4 inch diameter quartz -dual tube
  • Pumping system – Turbo pump
  • Gas Control Units – Up to 10 gases controlled by separate MFC automatic controls + 2 extra ports
  • 3 metal organic source injection ports are included

Contact Micro Photonics for more information at 610-366-7103 or info@microphotonics.com

  • Size: 118(W) x 71(H) x 30(D) inches
  • Designed for safety: Enclosed in a safety cabinet
  • Gas supply: Up to 10 gases and 3 MO sources for gas-phase synthesis
  • Motor-controlled movable heaters for fast heating and cooling (patented)
  • Fully computer-controlled programmable recipes
  • Invited training for full sample preparation processes for synthesis, etching, and transfer
  • Supply of high-quality source material
  • CVD chambers connected to a Glove Box. Free from air exposure!
TCVD-RF100CA Specifications
CVD Reactor
Tube type 4 inch diameter quartz
Substrate Size

Lateral insertion of 10mm to <4 inch wafers possible. (Loading frames for small samples)

Rolled metallic foils can be loaded to synthesize A4 sized or larger 2D materials

Heating

Dual-zone heater and controller for graphene/h-BN synthesis. Single-zone precursor heater and Dual-zone deposition heater for TMDC synthesis

The heaters are movable along two rails and the distance can be motor-controlled, enabling 10 degree C/sec or faster temperature change rate

Base Pressure
10-5 mbar (depending on the dryness of source)
Operating Pressure
10-3 mbar – 1 bar
Precursor

Max 10 gas lines

Metal oxide sources of various transition metals placed in Heat Zone 1 for solid source growth

Other Metal Organic (MO) sources

Extra 3 Metal-Organic source injection ports are included

Low-T cold trap for residual sources

Flow Control

Precursor gases: -.1 – 10 sccm

Other gases: 10-1000 sccm

Automatic Flow control

Vacuum

Turbo pump 450 l/s (ISO160)<10-6 mbar

Dry scroll pump < 10-1 mbar

Sample Switching
Position switching by sample loading stage
System Control
Control PC system(12″ touch, dual core)

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