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    Home / Products / Graphene / TCVD-RF100CA – RF/MW Module

    TCVD-RF100CA – RF/MW Module

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    Premium Custom Design Dual CVD System with a Glove Box 

    A Chemical Vapor Deposition (CVD) system for the synthesis of 2D materials at scales from a chip to a wafer, including synthesis of graphene, h-BN, TMDC’s on various substrates by use of gas-phase or solid precursors and metal-organic (MO) sources.  The synthesized samples can be transferred to a glove box filled with inert gases for further processes without exposure to environmental effects.

    For the development and research into future materials and graphene, h-BN, CNT, TMDC’s, the TCVD-DC100CA is the quality tool of choice that comes with a vast knowledge of know-how.

    The TVCD-DC100CA Features

    • Automatic control system
    • Optimized for Graphene, CNT, h-BN and TMDC growth
    • Water cooling and turbo pump for synthesis and environmental stability
    • Process temperature: ~1,100 degree C
    • Uniformity of Film Thickness: + or – 3%
    • Movable furnace method is our unique knowhow for fast heating and fast cooling of the sample
    • Standard Safety box

    The TCVD-100A Advantages

    Quality, advanced equipment that is customizable to your research needs.

    • Furnaces – dual furnace with RF M/W Module
    • Chamber size – 4 inch diameter quartz -dual tube
    • Pumping system – Turbo pump
    • Gas Control Units – Up to 10 gases controlled by separate MFC automatic controls + 2 extra ports
    • 3 metal organic source injection ports are included

    Contact Micro Photonics for more information at 610-366-7103 or info@microphotonics.com

    • Size: 118(W) x 71(H) x 30(D) inches
    • Designed for safety: Enclosed in a safety cabinet
    • Gas supply: Up to 10 gases and 3 MO sources for gas-phase synthesis
    • Motor-controlled movable heaters for fast heating and cooling (patented)
    • Fully computer-controlled programmable recipes
    • Invited training for full sample preparation processes for synthesis, etching, and transfer
    • Supply of high-quality source material
    • CVD chambers connected to a Glove Box. Free from air exposure!
    TCVD-RF100CA Specifications
    CVD Reactor
    Tube type 4 inch diameter quartz
    Substrate Size

    Lateral insertion of 10mm to <4 inch wafers possible. (Loading frames for small samples)

    Rolled metallic foils can be loaded to synthesize A4 sized or larger 2D materials
    Heating

    Dual-zone heater and controller for graphene/h-BN synthesis. Single-zone precursor heater and Dual-zone deposition heater for TMDC synthesis

    The heaters are movable along two rails and the distance can be motor-controlled, enabling 10 degree C/sec or faster temperature change rate
    Base Pressure
    10-5 mbar (depending on the dryness of source)
    Operating Pressure
    10-3 mbar – 1 bar
    Precursor

    Max 10 gas lines

    Metal oxide sources of various transition metals placed in Heat Zone 1 for solid source growth
    Other Metal Organic (MO) sources

    Extra 3 Metal-Organic source injection ports are included

    Low-T cold trap for residual sources
    Flow Control

    Precursor gases: -.1 – 10 sccm

    Other gases: 10-1000 sccm

    Automatic Flow control
    Vacuum

    Turbo pump 450 l/s (ISO160)<10-6 mbar

    Dry scroll pump < 10-1 mbar
    Sample Switching
    Position switching by sample loading stage
    System Control
    Control PC system(12″ touch, dual core)

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